Document
MSC83303
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz
.250 2LFL (S010) hermetically sealed ORDER CODE MSC83303 BRANDING 83303
PIN CONNECTION
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DESCRIPTION The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 50°C)
10.0 540 30 200 − 65 to +200
W mA V °C °C
Collector-Supply Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 12 °C/W
*Applies only to rated RF amplifier operation
September 2, 1994
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ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
I C = 1 mA I E = 1 mA I C = 5 mA VCB = 28 V VCE = 5 V
IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 200 mA
45 3.5 45 — 30
— — — — —
— — — 0.5 300
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc PG COB
f = 3.0 GHz f = 3.0 GHz f = 3.0 GHz f = 1 MHz
PIN = 0.79 W PIN = 0.79 W PIN = 0.79 W VCB = 28 V
VCC = 28 V VCC = 28 V VCC = 28 V
2.5 30 5.0 —
2.8 33 5.5 —
— — — 5
W % dB pF
TYPICAL PERFORMANCE TYPICAL POWER OUTPUT vs FREQUENCY
PERCENT POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE
TYPICAL COLLECTOR EFFICIENCY vs FREQUENCY
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IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
ZIN
FREQ. 1.0 GHz 1.7 GHz 2.0 GHz 2.3 GHz 2.7 GHz 3.0 GHz
ZIN (Ω) 4.4 + j 8.7 4.5 + j 14.5 5.1 + j 20.0 7.0 + j 25.0 16.0 + j 33.0 33.0 + j 29.0
ZCL (Ω) 13.0 + j 23.0 7.5 + j 12.5 6.0 + j 7.8 4.5 + j 2.2 3.8 − j 2.0 3.3 − j 6.0 POUT = Saturated VCC = 28 V Normalized to 50 ohms
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
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TEST CIRCUIT Ref.: Dwg. No. C125562
RF Amplifier Power Output Test
All dimensions are in inches. Frequency 3.0 GHz
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PACKAGE MECHANICAL DATA Ref. Dwg. No. 12-0216 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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