MSC82040

MSC82040 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz POUT = 27 dBm MIN. @ 1.0 GHz .230 4L STUD (S027) hermetically sealed ORDER CODE MSC82040 BRANDING 82040 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC82040 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter PDISS IC VCE TJ TSTG Power Dissipation Device Bias Current (see Safe Area) — 200 20 200 − 65 to +200 W mA V °C °C Collector-Emitter Bias Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation October 1992 1/6 MSC82040 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V IE = 0mA IC = 0mA IB = 0mA IC = 100mA 45 3.5 20 — 15 — — — — — — — — 0.5 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit G P* ∆ GP * COB * Note: f = 1...