MSC81400M
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 2...
MSC81400M
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
. . . . . .
REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 400 W MIN. WITH 6.5 dB GAIN
.400 x .500 2LFL (S038) hermetically sealed ORDER CODE MSC81400M BRANDING 81400M
PIN CONNECTION
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DESCRIPTION The MSC81400M "Super Power"
transistor is a high peak pulse power device specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 25:1 load mismatch condition at any phase angle under full rated conditions. The MSC81400M is housed in the unique BIGPAC™ hermetic metal/ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC ≤ 80˚C)
1000 28 55 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.12 °C/W
*Applies only to rated RF amplifier operation
October 1992
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MSC81400M
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE DYNAMIC
Symbol
IC = 15mA IE = 1mA IC = 50mA VCE = 50V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 1A
65 3.5 65 — 15
— — — — —
— — — 35 120
V V V mA —
Te...