MSC81350M

MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORY/GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 350 W MIN. WITH 7.0 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE MSC81350M BRANDING 81350M PIN CONNECTION DESCRIPTION The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency. The MSC81350M is housed in the unique AMPAC™ package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base www.DataSheet4U.com PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 55°C) 720 19.8 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81350M ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbol IC = 10mA IE = 1mA IC = 25mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = ...