MSC80917
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MSC80917 is low level Class-C, Common Base Device De...
MSC80917
NPN SILICON RF MICROWAVE
TRANSISTOR
DESCRIPTION:
The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications.
PACKAGE STYLE .280 2L FL (B)
2 3 1
FEATURES INCLUDE:
Omnigold™ Metalization System POUT 4.0 W Min. GP = 10 dB
MAXIMUM RATINGS
IC
www.DataSheet4U.com
1.0 A 37 V 7.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 35 °C/W
1 = COLLECTOR 2 = BASE 3 = EMITTER
VCE
PDISS TJ TSTG θJC
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICES hFE GP POUT η
TC = 25 °C
TEST CONDITIONS
IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 35 V VCE = 5.0 V VCE = 35 V IC = 100 mA f = 1025 to 1150 MHz DUTY CYCLE = 1.0%
MINIMUM TYPICAL MAXIMUM
45 20 3.5 1.0 20 10 4.0 35 120
UNITS
V V V mA
PIN = 400 mW PULSE WIDTH = 10 µS
dB W %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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