MRFE6P3300HR5

Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment. Typical Narrowband Two - Tone Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain — 20.4 dB Drain Efficiency — 44.8% IMD — - 28.8 dBc Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Designed for Push - Pull Operation Only Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRFE6P3300HR3 MRFE6P3300HR5 860 MHz, 300 W, 32 V LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 www.DataSheet4U.com Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +66 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C ...