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MGFC39V5867

Part Number	MGFC39V5867
Manufacturer	Mitsubishi Electric
Description	C band internally matched power GaAs FET
Published	Jul 4, 2007
Detailed Description	< C band internally matched power GaAs FET > MGFC39V5867 5.8 – 6.75 GHz BAND / 8W DESCRIPTION The MGFC39V5867 is an inte...
Datasheet	MGFC39V5867 PDF File

Overview

< C band internally matched power GaAs FET > MGFC39V5867 5.
8 – 6.
75 GHz BAND / 8W DESCRIPTION The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.
8 – 6.
75 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.
) @f=5.
8 – 6.
75GHz  High power gain GLP=9dB (TYP.
) @f=5.
8 – 6.
75GHz APPLICATION  VSAT 2MIN 12.
9 +/-0.
2 2MIN OUTLINE DRAW ING Unit : millimeters 21.
0 +/-0.
3 (1) 0.
6 +/-0.
15 (2) (2) R-1.
6 (3) 10.
7 17.
0 +/-0.
2 11.
3 0.
1 2.
6 +/-0.
2 4.
5 +/-0.
4 1.
6 0.
2 12.
0 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID...

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MGFC39V5867 C band internally matched power GaAs FET - Mitsubishi Electric

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