MGF4961B

SUPER LOW NOISE InGaAs HEMT

Feb./2007 MGF4961B SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing 4.0±0.2 (1.05) 1.9±0.1 (1.05) (unit: mm) FEATURES Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ.) High associated gain @ f=20GHz Gs...

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Mitsubishi Electric

Download MGF4961B Datasheet

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