Microwave Power MES FET
June /2004
MITSUBISHI SEMICONDUCTOR
MGF1952A
Microwave Power MES FET (Leadless Ceramic Package)
DESCRIPTION...
Description
June /2004
MITSUBISHI SEMICONDUCTOR
MGF1952A
Microwave Power MES FET (Leadless Ceramic Package)
DESCRIPTION
The MGF1952A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
High gain and High P1dB Glp=7.0dB , P1dB=17dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
Fig.1
QUALITY GRADE
GG
ORDERING INFORMATION
Tape & reel 3000pcs./reel
Keep Safety first in your circuit designs!
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ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25°C )
Ratings -8 -8 240 600 125 -65 to +125
(Ta=25°C )
Unit V V mA mW °C °C
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Synbol V(BR)GDO IDSS VGS(off) P1dB Glp Parameter
Gate to drain breakdown voltage Saturated drain current Gate to source cut-off voltage Output Pow...
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