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MGF0953P

Mitsubishi Electric

High-power GaAs FET


Description
< High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES  High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm  High power gain Gp=16.5dB(TYP.) @f=2.15GHz  High power added efficiency...



Mitsubishi Electric

MGF0953P

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