APTC80TDU15P

APTC80TDU15P Triple dual Common Source Super Junction MOSFET Power Module D1 D3 D5 G1 G3 G5 VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies S1 S1/S2 S3 S3/S 4 S5 S5/ S6 S2 G2 S4 G4 S6 G6 Features - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration D2 D4 D6 www.DataSheet4U.com D1 D3 D5 G1 S1 /S2 S1 S2 G2 S3/S4 G3 S3 S4 G4 S5/S 6 G5 S5 S6 G6 D2 D4 D6 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very low (12mm) profile Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Max ratings 800 28 21 110 ±30 150 277 24 0.5 670 Unit V A V mΩ W A mJ Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C These Devices ar...