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APTC80H15T3G

MicroSemi

Full - Bridge Super Junction MOSFET Power Module

APTC80H15T3G Full - Bridge Super Junction MOSFET VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Applicat...


MicroSemi

APTC80H15T3G

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Description
APTC80H15T3G Full - Bridge Super Junction MOSFET VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies 11 22 19 Q2 23 8 Q4 7 10 Power Module 13 14 Q1 Q3 18 Features - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration 26 4 3 29 15 30 31 R1 32 16 27 www.DataSheet4U.com 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Max ratings 800 28 21 110 ±30 150 277 17 0.5 670 Unit V A V mΩ W A mJ July, 2006 1–6 APTC80H15T3G – Rev 2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche cu...




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