Document
APTC60HM70SCTG
Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module
VBUS CR1A CR3A
VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C
Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
Q1
CR1B
CR3B
Q3
Features •
G3 S3
G1 S1 CR2A OUT1 OUT2 CR4A
Q2
CR2B
CR4B
•
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
Q4
G2 S2 NTC1 0/VBUS NTC2
G4 S4
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
www.DataSheet4U.com
• • • •
G3 S3 G4 S4 OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS complaint Max ratings 600 39 29 156 ±30 70 250 20 1 1800 Unit V
APTC60HM70SCTG – Rev 2 October, 2005
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
A V mΩ W A mJ
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–8
APTC60HM70SCTG
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Typ
Tj = 25°C Tj = 125°C 2.1 3
VGS = 10V, ID = 19.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V
Max 250 500 70 3.9 ±100
Unit µA mΩ V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 39A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω
Min
Typ 7015 2565 212 259 29 111 21 30 283 84 402 980 657 1206
Max
Unit pF
nC
ns
µJ
µJ
Series diode ratings and characteristics
Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V
di/dt = 200A/µs
Min 200 Tj = 25°C Tj = 125°C Tc = 85°C
Typ
Max 250 500
Unit V µA A
VR=200V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
24 48 33 150
ns nC
APT website – http://www.advancedpower.com
2–8
APTC60HM70SCTG – Rev 2 October, 2005
Tj = 125°C
30 1.1 1.4 0.9
1.15 V
APTC60HM70SCTG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C IF = 20A Tj = 175°C IF = 20A, VR = 300V di/dt =800A/µs f = 1MHz, VR = 200V VR=600V f = 1MHz, VR = 400V Min 600 Typ 100 200 20 1.6 2.0 28 130 100 Max 400 2000 1.8 2.4 Unit V µA A V nC pF
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode
Min
Typ
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Max 0.5 1.2 1.5 150 125 100 4.7 160
Unit
°C/W
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
2500 -40 -40 -40 1.5
V °C N.m g Unit kΩ K
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952
Max
RT =
R 25 T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 T − T 25
APT website – http://www.advancedpower.com
3–8
APTC60HM70SCTG – Rev 2 October, 200.