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APTC60HM70SCTG Dataheets PDF



Part Number APTC60HM70SCTG
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module
Datasheet APTC60HM70SCTG DatasheetAPTC60HM70SCTG Datasheet (PDF)

APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 CR1B CR3B Q3 Features • G3 S3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel SiC Schottky Diode - Ze.

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APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 CR1B CR3B Q3 Features • G3 S3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration www.DataSheet4U.com • • • • G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS complaint Max ratings 600 39 29 156 ±30 70 250 20 1 1800 Unit V APTC60HM70SCTG – Rev 2 October, 2005 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C A V mΩ W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–8 APTC60HM70SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Typ Tj = 25°C Tj = 125°C 2.1 3 VGS = 10V, ID = 19.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V Max 250 500 70 3.9 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 39A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Min Typ 7015 2565 212 259 29 111 21 30 283 84 402 980 657 1206 Max Unit pF nC ns µJ µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs Min 200 Tj = 25°C Tj = 125°C Tc = 85°C Typ Max 250 500 Unit V µA A VR=200V trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 24 48 33 150 ns nC APT website – http://www.advancedpower.com 2–8 APTC60HM70SCTG – Rev 2 October, 2005 Tj = 125°C 30 1.1 1.4 0.9 1.15 V APTC60HM70SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C IF = 20A Tj = 175°C IF = 20A, VR = 300V di/dt =800A/µs f = 1MHz, VR = 200V VR=600V f = 1MHz, VR = 400V Min 600 Typ 100 200 20 1.6 2.0 28 130 100 Max 400 2000 1.8 2.4 Unit V µA A V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode Min Typ Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Max 0.5 1.2 1.5 150 125 100 4.7 160 Unit °C/W Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 1.5 V °C N.m g Unit kΩ K Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max RT = R 25 T: Thermistor temperature   1 1  RT : Thermistor value at T exp B 25 / 85   T − T    25  APT website – http://www.advancedpower.com 3–8 APTC60HM70SCTG – Rev 2 October, 200.


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