PD - 94836
IRFIZ44NPbF
l l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET VDSS = 55V RDS(on) = 0.024Ω
D
G S
ID = 31A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ...