TK15H50C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK15H50C
○ Switching Regulator Applicati...
TK15H50C
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK15H50C
○ Switching
Regulator Applications
Unit: mm
Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.)
High forward transfer admittance : |Yfs| = 8.5 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
500
V
500
V
±30
V
15
A
60
A
150
W
765
mJ
15
A
15
mJ
150
°C
−55 to 150
°C
1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16K1A
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods...