2N6660X
MECHANICAL DATA Dimensions in mm (inches)
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
FEATURES
4.19 (0.165) 4.95 (0.195)
12.70 (0.500) min.
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
• Switching Regulators • Converters • Motor Drivers
5.08 (0.200) typ.
2 1
0.66 (0.026) 1.14 (0.045)
2.54 (0.100)
3
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0.71 (0.028) 0.86 (0.034)
45˚
TO–39 METAL PACKAGE
Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain CASE – Drain
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
VDS VGS ID ID IDM PD PD Tj Tstg TL Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current * Power Dissipation Power Dissipation Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) @ TCASE = 25°C @ TCASE = 100°C @ TCASE = 25°C @ TCASE = 100°C 60V ±40V ±1.1A ±0.8A ±3A 6.25W 2.5W –55 to 150°C –55 to 150°C 300°C
Operating Junction Temperature Range
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
DOC: 7083 iss 1
2N6660X
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
STATIC CHARACTERISTICS BVDSS VGS(th) IGSS Drain – Source Breakdown Voltage Gate Threshold Voltage Gate – Body Leakage Current VGS = 0V VDS = VGS VGS = ±15V VDS = 0V TCASE = 125°C VDS = Max. Ratings VGS = 0V IDSS ID(on)* Zero Gate Voltage Drain Current On–State Drain Current VDS =0.8VMax.Ratings VGS = 0V VGS = 5V RDS(on)* Drain – Source On Resistance VGS = 10V ID = 1A VGS = 5V VDS(on)* gFS* Ciss Coss Crss tON tOFF IS ISM VSD Drain – Source On Voltage DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn–On Time Turn–Off Time Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage 1 VDD = 25V RL = 23Ω ID = 1A RG = 25Ω
,
Test Conditions
ID = 10μA ID = 1mA
Min.
60 0.8
Typ.
100 1.5 1 5 1 50
Max.
Unit
V nA
2.2 ±100 ±500 10 500
μA A
TCASE = 125°C 1.5 ID = 0.3A TCASE = 125°C ID = 0.3A ID = 1A ID = 0.5A VDS = 25V 170
VDS = ≥2VDS(ON) VGS = 10V
1.7 4.7 2.7 3.9 1.4 2.7 195 35 33 2 8 8 50 40 10 10 10 5 3 4.2 1.5 3
Ω
VGS = 10V VDS = 25V VGS = 0V f = 1MHz
V
mS pF
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER Symbol Showing The Integral PN Juncion Rectifier VGS = 0V IS = -1.1A
/
-1.1
5
A
-3 -0.9 V
TCASE = 125°C
1 Pulse Test: Pulse width ≤ 300 μs , Duty Cycle ≤ 2%
Parameter
RθJA RθJC Thermal Resistance, Junction to Ambient (Free Air Operation) Thermal Resistance, Junction to Case
Min.
Typ.
Max.
170 20
Unit
C/W C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
DOC: 7083 iss 1
.