Power MOSFET
PD - 94752
AUTOMOTIVE MOSFET
IRFR4105Z IRFU4105Z
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technolo...
Description
PD - 94752
AUTOMOTIVE MOSFET
IRFR4105Z IRFU4105Z
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
RDS(on) = 24.5mΩ ID = 30A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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D-Pak IRFR4105Z
I-Pak IRFU4105Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
Max.
30 21 120 48
Units
A W W/°C V mJ A mJ
PD @TC = 25°C Power Dissipation VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current
d
0.32 ± 20
Single Pulse Avalanche Energy Tested Value
Ã
h
29 46 See Fig.12a, 12b, 15, 16 -55 to + 175
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
g
°C 300 (1.6mm from case ) 10 lbf in (1.1N m)
Soldering Temperature, f...
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