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MGF0917A

L & S BAND GaAs FET

Description

MITSUBISHI SEMICONDUCTOR MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm High power gain Gp=21dB(TYP.) @f=1.9GHz High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=...

Mitsubishi Electric

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