L & S BAND GaAs FET
MITSUBISHI SEMICONDUCTOR
MGF0913A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0913A GaAs FET...
Description
MITSUBISHI SEMICONDUCTOR
MGF0913A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm High power gain Gp=13dB(TYP.) @f=1.9GHz High power added efficiency ηadd=48%(TYP.) @f=1.9GHz,Pin=18dBm Hermetic Package
APPLICATION
For UHF Band power amplifiers
Fig.1
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=200mA Rg=500Ω
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
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Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 800 -2.5 5.4 5.0 175 -65 to +175
Unit
V V mA mA mA W °C °C
Electrical characteristics
Symbol
IDSS VGS(off) gm Po ηadd GLP NF Rth(ch-c)
(Ta=25°C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=2.5mA VDS=3V,ID=300mA VDS=10V,ID=200mA,f=1.9GHz Pin=18dBm VDS=10V,ID=200mA,f=1.9GHz ∆Vf Method 400 -1 29.5 11 -
Limits
Typ. 550 -3 200 31 48 13 2.0 20 Max. 800 -5 30
Unit
mA V mS dBm % dB dB °C/W
*1:Channel to case /
Above parameters, ratings, limits are subjec...
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