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MGF0912A

L & S BAND GaAs FET

Description

MITSUBISHI SEMICONDUCTOR MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAWING Unit : millimeters FEATURES High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm High power gain Gp=10.5dB(TYP.) @f=1.9GHz High power added ef...

Mitsubishi Electric

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