Document
PD - 95150
Advanced Process Technology l Surface Mount (IRL3103S) l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
IRL3103SPbF IRL3103LPbF
HEXFET® Power MOSFET
D
VDSS = 30V RDS(on) = 12mΩ
G S
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Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL3103L) is available for lowprofile applications.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
ID = 64A
D2Pak IRL3103S
TO-262 IRL3103L
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
64 45 220 94 0.63 ± 16 34 22 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB mount)**
Typ.
––– –––
Max.
1.6 40
Units
°C/W
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1
04/19/04
IRL3103S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Min. 30 ––– ––– ––– 1.0 22 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 12 VGS = 10V, ID = 34A mΩ 16 VGS = 4.5V, ID = 28A ––– V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 34A 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 33 ID = 34A 5.9 nC VDS = 24V 17 VGS = 4.5V, See Fig. 6 and 13 ––– VDD = 15V ––– ID = 34A ––– RG = 1.8Ω ––– VGS = 4.5V, See Fig. 10 Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 1650 ––– VGS = 0V 650 ––– VDS = 25V 110 ––– pF ƒ = 1.0MHz, See Fig. 5 1320
130 mJ IAS = 34A, L = 0.22mH
Typ. ––– 0.028 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 8.9 120 14 9.1
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 64 ––– ––– showing the A G integral reverse ––– ––– 220 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 34A, VGS = 0V ––– 57 86 ns TJ = 25°C, IF = 34A ––– 110 170 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by Starting TJ = 25°C, L = 220µH
TJ ≤ 175°C
max. junction temperature. (See fig. 11) RG = 25Ω, IAS = 34A, VGS=10V (See Figure 12)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994
ISD ≤ 34A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
2
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IRL3103S/LPbF
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
100
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
10
10
2.7V
2.7V
20µs PULSE WIDTH T = 25 C
J ° 1 10 100
1 0.1
1 0.1
20µs PULSE WIDTH T = 175 C
J ° 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source V.