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HFA08TB120SPBF Dataheets PDF



Part Number HFA08TB120SPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Soft Recovery Diode
Datasheet HFA08TB120SPBF DatasheetHFA08TB120SPBF Datasheet (PDF)

PD-96034 HFA08TB120SPbF HEXFRED • • • • • • TM Ultrafast, Soft Recovery Diode Base Cathode 2 Features • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free N/C VR = 1200V VF(typ.)* = 2.4V IF(AV) = 8.0A Qrr (typ.)= 140nC IRRM(typ.) = 4.5A 3 1 Anode trr(typ.) = 28ns di(rec)M/dt (t.

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PD-96034 HFA08TB120SPbF HEXFRED • • • • • • TM Ultrafast, Soft Recovery Diode Base Cathode 2 Features • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free N/C VR = 1200V VF(typ.)* = 2.4V IF(AV) = 8.0A Qrr (typ.)= 140nC IRRM(typ.) = 4.5A 3 1 Anode trr(typ.) = 28ns di(rec)M/dt (typ.)* = 85A/µs Description International Rectifier's HFA08TB120S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. www.DataSheet4U.com D2 Pak Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 8.0 130 32 73.5 29 -55 to +150 Units V A W °C * 125°C www.irf.com 1 10/07/05 HFA08TB120SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V BR V FM IRM CT LS Cathode Anode Breakdown Voltage Max Forward Voltage Max Reverse Leakage Current Junction Capacitance Series Inductance Min. Typ. Max. Units 1200 ––– ––– ––– 2.6 3.3 ––– 3.4 4.3 ––– 2.4 3.1 ––– 0.31 10 ––– 135 1000 ––– 11 20 ––– 8.0 ––– V V µA pF nH Test Conditions IR = 100µA IF = 8.0A IF = 16A IF = 8.0A, TJ = 125°C VR = VR Rated TJ = 125°C, V R = 0.8 x VR RatedD Rated VR = 200V Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter t rr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time See Fig. 5 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current See Fig. 8 During t b Min. Typ.


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