GB15RF120K

PD - 94571 GB15RF120K IGBT PIM MODULE Features Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC Substrate Low Stray Inductance Design VCES = 1200V IC = 15A, TC=80°C tsc > 10µs, TJ=150°C ECONO2 PIM VCE(on) typ. = 2.55V Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance UL Listed  www.DataSheet4U.com Absolute Maximum Ratings (TJ =25°C, unless otherwise indicated) Parameter Symbol VCES VGES IC ICM Diode Maximum Forward Current Power Dissipation IFM d PD VRRM IF(AV) IFSM It VCES VGES IC ICM Power Dissipation Repetitive Peak Reverse Voltage Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage PD VRRM TJ TSTG VISOL AC (1min.) 1 device Continuous 25°C / 80°C 25°C 25°C 2 Test Conditions Ratings 1200 ±20 Units V Inverter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current Continuous 25°C / 80°C 25°C 25°C 25 / 15 50 50 125 1600 15 120 72 1200 ±20 15 / 7.5 30 83 1200 150 -40 to +125 2500 V W V °C A As V 2 A W V A 1 device 50/60Hz sine pulse sine pulse 25°C 80°C Input Repetitive Peak Reverse Voltage Surge Current (Non Repetitive) I t (Non Repetitive) 2 Rec...