STW13NK80Z

STW13NK80Z N-channel 800V - 0.53Ω - 12A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW13NK80Z VDSS 800V RDS(on) <0.65Ω ID pW 12A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances t(s)■ Very good manufacturing repeatibility ucDescription rodThe SuperMESH™ series is obtained through an Pextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to tepushing on-resistance significantly down, special lecare is taken to ensure a very good dv/dt ocapability for the most demanding applications. bsSuch series complements ST full range of high voltage MOSFETs including revolutionary - OMDmesh™ products. t(s)Applications uc■ Switching application TO-247 Internal schematic diagram te ProdOrder codes olePart number ObsSTW13NK80Z Marking W13NK80Z Package TO-247 Packaging Tube October 2006 Rev 4 1/14 www.st.com 14 Contents Contents STW13NK80Z 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...