M58WR032EB

M58WR032ET M58WR032EB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ www.DataSheet4U.com ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100ns PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down SECURITY – 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK Figure 1. Package FBGA VFBGA56 (ZB) 7.7 x 9 mm ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58WR032ET: 8814h – Bottom Device Code, M58WR032EB: 8815h April 2004 1/81 M58WR032ET, M58WR032EB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Package. . . . . . . . ...