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PESD3V3V4UW

NXP

(PESDxV4UW) Very low capacitance quadruple ESD protection diode arrays

PESDxV4UW series Very low capacitance quadruple ESD protection diode arrays in SOT665 package Rev. 01 — 22 April 2005 Pr...


NXP

PESD3V3V4UW

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Description
PESDxV4UW series Very low capacitance quadruple ESD protection diode arrays in SOT665 package Rev. 01 — 22 April 2005 Product data sheet 1. Product profile 1.1 General description Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in ultra small SOT665 plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features s ESD protection of up to four lines s Very low diode capacitance s Low clamping voltage s Ultra low leakage current: IRM = 3 nA s ESD protection up to 12 kV s IEC 61000-4-2; level 4 (ESD) 1.3 Applications s Computers and peripherals s Audio and video equipment s Cellular handsets and accessories s Communication systems s Portable electronics s Subscriber Identity Module (SIM) card protection www.DataSheet4U.com 1.4 Quick reference data Table 1: Symbol VRWM Quick reference data Parameter reverse stand-off voltage PESD3V3V4UW PESD5V0V4UW Cd diode capacitance f = 1 MHz; see Figure 5; VR = 0 V 15 12 18 15 pF pF 3.3 5.0 V V Conditions Min Typ Max Unit PESD3V3V4UW PESD5V0V4UW Philips Semiconductors PESDxV4UW series Very low capacitance quadruple ESD protection diode arrays 2. Pinning information Table 2: Pin 1 2 3 4 5 Pinning Description cathode 1 common anode cathode 2 cathode 3 cathode 4 1 2 3 5 4 1 3 2 4 5 sym050 Simplified outline Symbol 3. Ordering information Table 3: Ordering information Package Name PESD3V3V4UW PESD5V0V4UW Description plastic surface mounted ...




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