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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D793
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PESDxS2UQ series Double ESD protection diodes in SOT663 package
Product specification Supersedes data of 2003 Dec 15 2004 Apr 27
Philips Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
FEATURES • Uni-directional ESD protection of up to two lines • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A • Low reverse leakage current: IRM < 1 nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. APPLICATIONS • Computers and peripherals • Communication systems • Audio and video equipment • High speed data lines • Parallel ports. DESCRIPTION Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING TYPE NUMBER PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. MARKING CODE(1) *E1 *E2 *E3 *E4 *E5
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PESDxS2UQ series
QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1 2 3 cathode 1 cathode 2 common anode DESCRIPTION VALUE 3.3, 5, 12, 15 and 24 UNIT V
200, 150, 38, 32 pF and 23 2
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3 1 3 2 2
001aaa732 sym022
Fig.1 Simplified outline (SOT663) and symbol.
2004 Apr 27
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp Ipp PARAMETER peak pulse power peak pulse current PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ
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PESDxS2UQ series
DESCRIPTION plastic surface mounted package; 3 leads
VERSION SOT663
−
CONDITIONS 8/20 µs pulse; notes 1 and 2 8/20 µs pulse; notes 1 and 2 − − − − − − −
MIN.
MAX. 150 15 15 5 5 3 150 +150 +150
UNIT W A A A A A °C °C °C
PESD24VS2UQ Tj Tamb Tstg junction temperature operating ambient temperature storage temperature
−65 −65
Notes 1. Non-repetitive current pulse 8/20 µs exponential decaying waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3.
2004 Apr 27
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
ESD maximum ratings SYMBOL ESD PARAMETER electrostatic discharge capability CONDITIONS
PESDxS2UQ series
VALUE
UNIT
IEC 61000-4-2 (contact discharge); notes 1 and 2 PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ HBM MIL-Std 883 PESDxS2UQ series 10 kV 30 30 30 30 23 kV kV kV kV kV
Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. ESD standards compliance ESD STANDARD IEC 61000-4-2; level 4 (ESD); see Fig.3
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CONDITIONS >15 kV (air); > 8 kV (contact) >4 kV
HBM MIL-Std 883; class 3
001aaa191
handbook, halfpage
120
MLE218
Ipp 100 % 90 %
Ipp (%)
100 % Ipp; 8 µs
80
e−t 50 % Ipp; 20 µs
40
10 %
0 0 10 20 30 t (µs) 40
tr = 0.7 to 1 ns 30 ns 60 ns
t
Fig.2
8/20 µs pulse waveform according to IEC 61000-4-5.
Fig.3
ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2.
2004 Apr 27
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VRWM PARAMETER reverse stand-off voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ IRM reverse leakage current PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ VBR breakdown voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ
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PESDxS2UQ series
CONDITIONS − − − − − VRWM = 3.3 V VRWM = 5 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IZ = 5 mA − − − − −
MIN. − − − − −
TYP.
MAX. 3.3 5 12 15 24 3 300 30 50 50 6.0 7.2 15.3 18.4 27.5 275 215 100 70 50 8 20 9 20 19 35 23 40 36 70
UNIT V V V V V µA nA nA nA nA V V V V V pF pF pF pF pF V V V V V V V V V V
0.55 50 <1 <1 <1 5.6 6.8 15.0 18.0 27.0 200 150 38 32 23 − − − − − − − − − −
5.2 6.4 14.7 17.6 26.5 f = 1 MHz; VR = 0 V − − − − − notes 1 and 2 Ipp = 1 A Ipp = 15 A Ipp = 1 A Ipp = 15 A Ipp = 1 A Ipp = 5 A Ipp = 1 A Ipp = 5 A Ipp = 1 A Ipp = 3 A − − − − − − − − − −
PESD15VS2UQ PESD24VS2UQ Cd diode capacitance PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ V(CL)R clamping voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ
2004 Apr 27
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
SYMBOL Rdiff PARAMETER differential resistance PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform.