PESD5V0S2UQ

DISCRETE SEMICONDUCTORS DATA SHEET M3D793 www.DataSheet4U.com PESDxS2UQ series Double ESD protection diodes in SOT663 package Product specification Supersedes data of 2003 Dec 15 2004 Apr 27 Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package FEATURES Uni-directional ESD protection of up to two lines Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A Low reverse leakage current: IRM < 1 nA ESD protection > 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. APPLICATIONS Computers and peripherals Communication systems Audio and video equipment High speed data lines Parallel ports. DESCRIPTION Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING TYPE NUMBER PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. MARKING CODE(1) *E1 *E2 *E3 *E4 *E5 1 PESDxS2UQ series QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1 2 3 cathode 1 cathode 2 common anode DESCRIPTION VALUE 3.3, 5, 12, 15 and 24 UNIT V 200, 150, 38, 32 pF and 23 2 www.DataSheet4U.com 3 1 3 2 2 001aaa732 sym022 Fig.1 Simplified outline (SOT663) and sy...