PESD5V0L6US

DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PESD5V0L6US Low capacitance 6-fold ESD protection diode array in SO8 package Product specification 2004 Feb 18 Philips Semiconductors Product specification Low capacitance 6-fold ESD protection diode array in SO8 package FEATURES Unidirectional ESD protection of up to 6 lines Bidirectional ESD protection of up to 5 lines Low diode capacitance Max. peak pulse power: Ppp = 35 W at tp = 8/20 µs Low clamping voltage: V(CL)R = 15 V at Ipp = 2.5 A Ultra low leakage current: IRM = 8 nA at VRWM = 5 V ESD protection up to 20 kV IEC 61000-4-2; level 4 (ESD) IEC-61000-4-5 (surge); Ipp = 2.5 A at tp = 8/20 µs. APPLICATIONS Computers and peripherals Communication systems Audio and video equipment High speed data lines Parallel ports. www.DataSheet4U.com PESD5V0L6US QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance; VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1, 2, 3, 4, 5, 8 6, 7 cathodes common anode DESCRIPTION VALUE 5 16 6 UNIT V pF 1 2 3 4 001aaa388 8 7 6 5 1 2 3 4 8 7 6 5 DESCRIPTION Low capacitance 6-fold ESD protection diode array in a small S08 plastic package designed to protect up to six transmission or data lines against damage caused by ElectroStatic Discharge (ESD) and other transients. MARKING TYPE NUMBER PESD5V0L6US MARKING CODE 5V0L6US sym004 Fig.1 Simplified outline (SO8) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBE...