ZXTP25012EFH

ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC(cont) = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. www.DataSheet4U.com C B Features High power dissipation SOT23 package High peak current Very high gain, 500 minimum Low saturation voltage E E C B Pinout - top view Applications MOSFET and IGBT gate driving DC - DC converters Motor drive High side driver Line disconnect switch Ordering information Device ZXTP25012EFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Device marking 1E8 Issue 1 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTP25012EFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(b) Base current Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Power dissipation at Tamb =25°C(c) Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEO VEBO IC IB ICM PD Limit -12 -12 -7 -4 -1 -10 0.73 5.84...