ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor
Summary
BVCEX > 200V BVCEO > 100V BVECO > 5V IC(cont) = 4.5A V...
ZXTN19100CFF 100V, SOT23F,
NPN high gain power
transistor
Summary
BVCEX > 200V BVCEO > 100V BVECO > 5V IC(cont) = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF
Description
Advanced process capability has been used to maximise the performance of this
transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance
C
B
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Features
High forward blocking voltage Low saturation voltage High gain Low profile high dissipation package
E
E C B Pinout - top view
Applications
Relay and solenoid driving DC fans Industrial and automotive switching
Ordering information
Device ZXTN19100CFFTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000
Device marking
1E5
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
1
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ZXTN19100CFF
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb = 25°C(a) Linear derating factor Power dissipation at Tamb = 25°C(b) Linear derating factor Power dissipation at Tamb = 25°C(c) Linear derating factor Power dissipation at Tamb = 25°C(d) Linear derating factor Operating and storage temperature ...