ZXMP10A17E6

ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -100V: RDS(ON) = 0.350 ; ID = -1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. SOT23-6 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive www.DataSheet4U.com SOT23-6 package APPLICATIONS DC–DC Converters Power Management functions Disconnect switches Motor control PINOUT ORDERING INFORMATION DEVICE ZXMP10A17E6TA ZXMP10A17E6TC REEL SIZE 7” 13” TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units DEVICE MARKING 1A17 Top View ISSUE 2 - SEPTEMBER 2005 1 SEMICONDUCTORS ZXMP10A17E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V; TA=25°C (b) @ VGS=10V; TA=70°C (b) @ VGS=10V; TA=25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -100 ±20 -1.6 -1.3 -1.3 -7.7 -2.1 -7.7 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A I DM IS I SM PD PD T j , T stg A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYM...