ZXMN2B14FH

ZXMN2B14FH 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (⍀) 0.055 @ VGS= 4.5V 20 0.075 @ VGS= 2.5V 0.100 @ VGS= 1.8V ID (A) 4.3 3.7 3.2 Description This new generation of trench MOSFETs from Zetex features low onresistance achievable with low gate drive. Features www.DataSheet4U.com D Low on-resistance Fast switching speed Low gate drive capability SOT23 package G S Applications DC-DC converters Power management functions Disconnect switches Motor control S D G Ordering information Device ZXMN2B14FHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel Top view 3,000 Device marking 2B4 Issue 2 - March 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMN2B14FH Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 4.5V; Tamb=25°C (b) @ VGS= 4.5V; Tamb=70°C (b) @ VGS= 4.5V; Tamb=25°C (a) Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at Tamb=25°C (a) Linear derating factor Power dissipation at Tamb =25°C (b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 20 ±8 4.3 3.5 3.5 21 2.4 21 1 8 1.5 12 -55 to +150 A A A W mW/°C W mW/°C °C Unit V V A Thermal resistance Parameter Junction to ambient Junction to ambient Symbol R⍜JA R⍜JA Limit 125 82 Unit °C/W °C/W NOTES: (a) For a device surface moun...