ZXMN2B03E6

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (⍀) 0.040 @ VGS= 4.5V 20 0.055 @ VGS= 2.5V 0.075 @ VGS= 1.8V ID (A) 5.4 4.6 4.0 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive. Features www.DataSheet4U.com D Low on-resistance Fast switching speed Low gate drive capability SOT23-6 package G S Applications DC-DC converters Power management functions Disconnect switches Motor control D D G Top view 3,000 D D S Ordering information Device ZXMN2B03E6TA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel Device marking 2B3 Issue 1 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN2B03E6 Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 4.5V; Tamb=25°C(b) @ VGS= 4.5V; Tamb=70°C(b) @ VGS= 4.5V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 20 ±8 5.4 4.3 4.3 26 2.8 26 1.1 8.8 1.7 13.7 -55 to +150 A A A W mW/°C W mW/°C °C Unit V V A Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R⍜JA R⍜JA Limit 113 73 Unit °C/W °C/W NOTES: (a) For a devi...