0405-1000M

0405-1000M Rev C . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull configuration at three hundreds microsecond pulse width ten percent duty factor across the frequency band 400-450 MHz. This hermetically sealed transistor is specifically designed for medium pulse radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC1 1400 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 85 Volts 3.5 Volts 70 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200oC + 200oC CASE OUTLINE 55SL, STYLE 2 ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Out (Note 2) Pulsed F = 400, 425,450 MHz Pin Power Input, Pulsed Vcc = 40 Volts, Pg ηc Pd VSWR1 Power Gain Collector Efficiency Pulse Amplitude Droop Load Mismatch Tolerance Pulse Width = 300 µs Duty = 10 % As above F = 425MHz, Po =1000W FUNCTIONAL CHARACTERISTICS @ 25 OC 1000 9.5 10 45 Watts 112 Watts dB % 0.7 dB 2:1 Bvces Ices Iebo Hfe θjc1 Collector to Emitter Breakdown Ic = 50 mA 75 Collector to Emitter Leakage Vce = 50 Volts ...