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ZXTP2013Z

Zetex Semiconductors

PNP LOW SATURATION MEDIUM POWER TRANSISTOR

ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESC...


Zetex Semiconductors

ZXTP2013Z

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Description
ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES 3.5 amps continuous current Up to 10 amps peak current Very low saturation voltages SOT89 APPLICATIONS Motor driving www.DataSheet4U.com Line switching High side switches Subscriber line interface cards (SLIC) ORDERING INFORMATION DEVICE REEL SIZE 7" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1,000 units ZXTP2013ZTA PINOUT DEVICE MARKING 953 VIEW ISSUE 1 - JUNE 2005 1 ZXTP2013Z ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range T j , T stg PD (a) SYMBOL BV CBO BV CEO BV EBO IC I CM PD LIMIT -140 -100 -7 -3.5 -10 1.5 12 2.1 16.8 -55 to 150 UNIT V V V A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R ␪ JA R ␪ JA LIMIT 83 60 UNIT °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a devi...




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