ZXTN25100DFH 100V, SOT23, NPN medium power transistor
Summary
BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(s...
ZXTN25100DFH 100V, SOT23,
NPN medium power
transistor
Summary
BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH
Description
Advanced process capability and package design have been used to maximise the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
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C
B
Features
High power dissipation SOT23 package High gain Low saturation voltage 180V forward blocking voltage 6V reverse blocking voltage
E
Application
Motor control DC fans DC-DC converters Lamp, relay, and solenoid driving
E C B Pinout - top view
Ordering information
Device ZXTN25100DFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000
Device marking
1B5
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
ZXTN25100DFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb Linear derating factor Power dissipation at Tamb Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Tj, Tstg ...