APT75GP120J

APT75GP120J 1200V POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ® E C E SO ISOTOP ® 2 T- 27 "UL Recognized" Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff 50 kHz operation @ 800V, 20A 20 kHz operation @ 800V, 44A RBSOA rated G C E MAXIMUM RATINGS Symbol VCES VGE www.DataSheet4U.com All Ratings: TC = 25°C unless otherwise specified. APT75GP120J UNIT Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 1200 ±20 ±30 128 57 300 300A @ 960V 543 -55 to 150 300 Watts °C Amps Volts VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL @ TC = 25°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000µA) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C) MIN TYP MAX UNIT 1200 3 4.5 3.3 3.0 1000 2 6 3.9 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (V...