APT75GN60LDQ3G

TYPICAL PERFORMANCE CURVES ® APT75GN60LDQ3 APT75GN60LDQ3G* APT75GN60LDQ3(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. TO-264 600V Field Stop Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE www.DataSheet4U.com All Ratings: TC = 25°C unless otherwise specified. APT75GN60LDQ3(G) UNIT Volts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 8 600 ±30 @ TC = 25°C I C1 I C2 I CM SSOA PD TJ,TSTG TL 155 93 225 225A @ 600V 536 -55 to 175 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(B...