APT10M19SVFR

APT10M19BVFR APT10M19SVFR 100V 75A 0.019Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. BVFR D3PAK TO-247 SVFR Faster Switching Lower Leakage Avalanche Energy Rated FAST RECOVERY BODY DIODE G S D TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol VDSS ID IDM www.DataSheet4U.com All Ratings: TC = 25°C unless otherwise specified. APT10M19BVFR_SVFR UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 100 75 300 ±30 ±40 370 2.96 -55 to 150 300 75 30 4 VGS VGSM PD TJ,TSTG TL IAR EAR EAS Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 100 0.019 250 1000 ±100 2 4 (VGS = 10V, ID = 37.5A) Ohms µA nA Volts 6-2004 050-560...