N-Channel MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 1 - APRIL 1998 FEATURES * BVDSS=60V * RDS(ON) = 0.33Ω * Repeti...
Description
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 1 - APRIL 1998 FEATURES * BVDSS=60V * RDS(ON) = 0.33Ω * Repetitive Avalanche Rating APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive * Stepper Motor Drivers PARTMARKING DETAIL ZVN4306V
ZVN4306GV
D
S D G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Avalanche www.DataSheet4U.com Current-Repetitive Avalanche Energy-Repetitive Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot I AR E AR T j:T stg VALUE 60 2.1 15 ± 20 3 1 25 -55 to +150 UNIT V A A V W A mJ °C
ZVN4306GV
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 12 0.22 0.32 0.7 350 140 0.33 0.45 60 1.3 3 20 10 100 TYP. MAX. UNIT CONDITIONS. V V nA µA µA A Ω Ω S pF pF V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=60V, V GS=0V V DS=48V, V GS=0V, T=125°C (2) V DS=10V, V GS=10V V GS=10V, I D=3A V GS=5V, I D=1.5A V DS=25V,I D=3A
g fs Forward Transconductance (1) Input Capacitance (2) C iss Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time ...
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