N-Channel MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS(on)= 1Ω * Repetiti...
Description
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS(on)= 1Ω * Repetitive avalanche rating * No transient protection required * Characterised for 5V logic drive APPLICATIONS * Automotive relay drivers * Stepper motor driver PARTMARKING DETAIL ZVN4206V
ZVN4206GV
D
S D G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb = 25°C Pulsed Drain Current Gate-Source Voltage
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SYMBOL V DS ID I DM V GS P tot I SD I AR E AR T j:T stg
VALUE 60 1 8 ± 20 2 600 600 15 -55 to +150
UNIT V A A V W mA mA mJ °C
Power Dissipation at T amb = 25°C Continuous Body Diode Current at T amb = 25°C Avalanche Current - Repetitive Avalanche Energy - Repetitive Operating and Storage Temperature Range
ZVN4206GV
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 300 100 60 20 8 12 12 15 3 1 1.5 60 1.3 3 100 10 100 MAX. UNIT CONDITIONS. V V nA µA µA A Ω Ω mS pF pF pF ns ns ns ns V DD...
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