Document
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3107-D
DESCRIPTION
Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package.
QUICK REFERENCE DATA
SYMBOL VDS ID PD Tj RDS(ON) IISL PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance Input supply current VIS = 5 V MAX. 50 16 65 150 50 650 UNIT V A W ˚C mΩ µA
APPLICATIONS
General purpose switch for driving lamps motors solenoids heaters
FEATURES
TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
DRAIN
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O/V CLAMP INPUT
RIG
POWER MOSFET
LOGIC AND PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT428
PIN 1 2 3 tab input drain source DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
D TOPFET I
P
2
drain
1 3
S
October 2001
1
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3107-D
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDS ID ID II IIRM PD Tstg Tj Tsold PARAMETER Continuous drain source voltage1 Continuous drain current Continuous drain current Continuous input current Non-repetitive peak input current Total power dissipation Storage temperature Continuous junction temperature2 Case temperature CONDITIONS VIS = 5 V; Tmb = 25 ˚C VIS = 5 V; Tmb ≤ 125 ˚C tp ≤ 1 ms Tmb ≤ 25 ˚C normal operation during soldering MIN. -5 -10 -55 MAX. 50 self limited 16 5 10 65 175 150 260 UNIT V A A mA mA W ˚C ˚C ˚C
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. 2 UNIT kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL EDSM EDRM PARAMETER Inductive load turn-off Non-repetitive clamping energy Repetitive clamping energy CONDITIONS IDM = 16 A; VDD ≤ 20 V Tmb ≤ 25 ˚C Tmb ≤ 95 ˚C; f = 250 Hz MIN. MAX. 200 32 UNIT mJ mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load. SYMBOL VDS PARAMETER Drain source voltage
3
REQUIRED CONDITION 4 V ≤ VIS ≤ 5.5 V
MIN. 0
MAX. 35
UNIT V
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance Junction to mounting base Junction to ambient CONDITIONS minimum footprint FR4 PCB MIN. TYP. 1.75 70 MAX. 1.92 UNIT K/W K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 All control logic and protection functions are disabled during conduction of the source drain diode.
October 2001
2
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3107-D
OUTPUT CHARACTERISTICS
Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER Off-state V(CL)DSS IDSS Drain-source clamping voltage CONDITIONS VIS = 0 V ID = 10 mA IDM = 2 A; tp ≤ 300 µs; δ ≤ 0.01 Drain source leakage current On-state RDS(ON) Drain-source resistance VDS = 40 V Tmb = 25 ˚C IDM = 6 A; tp ≤ 300 µs; δ ≤ 0.01 VIS ≥ 4.4 V VIS ≥ 4 V Tmb = 25 ˚C Tmb = 25 ˚C 36 39 95 50 100 55 mΩ mΩ mΩ mΩ 50 50 60 0.1 70 100 10 V V µA µA MIN. TYP. MAX. UNIT
OVERLOAD CHARACTERISTICS
-40˚C ≤ Tmb ≤ 150˚C unless otherwise specified. SYMBOL ID PARAMETER Short circuit load Drain current limiting CONDITIONS VDS = 13 V VIS = 5 V; 4.4 V ≤ VIS ≤ 5.5 V 4 V ≤ VIS ≤ 5.5 V Overload protection PD(TO) TDSC Tj(TO) Overload power threshold Characteristic time Overtemperature protection Threshold junction temperature2 150 170 ˚C VIS = 5 V;Tmb = 25˚C device trips if PD > PD(TO) which determines trip time1 40 200 120 350 160 600 W µs Tmb = 25˚C 16 12 8 24 32 36 36 A A A MIN. TYP. MAX. UNIT
1 Trip time td sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO) ]. 2 This is independent of the dV/dt of input voltage VIS.
October 2001
3
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3107-D
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input. Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified SYMBOL VIS(TO) IIS IISL VISR tlr V(CL)I.