IRGIB6B60KD

PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings www.DataSheet4U.com TO-220 Full-Pak Max. 600 11 7.0 A 22 22 9.0 6.0 18 2500 ±20 38 19 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Units V c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw PD @ TC = 100°C Maximum Power Dissipation Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Di...