IRFP15N60LPBF

SMPS MOSFET PD - 95517 IRFP15N60LPbF Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications Lead-Free HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. ID 600V 385mΩ 130ns 15A Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. Higher Gate voltage threshold offers improved noise immunity . TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 15 9.7 60 280 Units A W W/°C V V/ns °C www.DataSheet4U.com c PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw d 2.3 ±30 10 -55 to + 150 300 (1.6mm from case ) 1.1(10) Nm (lbfin) Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 130 240 450 5.8 15 A 60 1.5 200 360 670 8.7 nC A V ns Conditions MOSFET symbol showing the integral reverse G D Ãc Diode Forward Voltage Reverse Recovery Time Reverse Recove...