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IRF634NSPbF Dataheets PDF



Part Number IRF634NSPbF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF634NSPbF DatasheetIRF634NSPbF Datasheet (PDF)

PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for.

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PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF634NL) is available for lowprofile application. IRF634NPbF IRF634NSPbF IRF634NLPbF HEXFET® Power MOSFET D VDSS = 250V RDS(on) = 0.435Ω G S ID = 8.0A www.DataSheet4U.com TO-220AB IRF634N D2Pak IRF634NS TO-262 IRF634NL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation… Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew„ Max. 8.0 5.6 32 88 3.8 0.59 ± 20 110 4.8 8.8 7.3 -55 to +175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C www.irf.com 1 05/28/04 IRF634N/S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 250 ––– ––– V VGS = 0V, I D = 250µA ––– 0.33 ––– V/°C Reference to 25°C, I D = 1mA ––– ––– 0.435 Ω VGS = 10V, ID = 4.8A ƒ 2.0 ––– 4.0 V VDS = VGS , ID = 250µA 5.4 ––– ––– S VDS = 50V, ID = 4.8A ƒ ––– ––– 25 VDS = 250V, VGS = 0V µA ––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 20V nA ––– ––– -100 VGS = -20V ––– ––– 34 ID = 4.8A ––– ––– 6.5 nC VDS = 200V ––– ––– 16 VGS = 10V, See Fig. 6 and 13 ––– 8.4 ––– VDD = 125V ––– 16 ––– ID = 4.8A ns ––– 28 ––– RG = 1.3Ω ––– 15 ––– VGS = 10V, See Fig. 10 ƒ D Between lead, 4.5 ––– ––– 6mm (0.25in.) nH G from package ––– 7.5 ––– and center of die contact S ––– 620 ––– VGS = 0V ––– 84 ––– VDS = 25V ––– 23 ––– pF ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 8.0 showing the A G integral reverse ––– ––– 32 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 4.8A, VGS = 0V ƒ ––– 130 200 ns TJ = 25°C, I F = 4.8A ––– 650 980 nC di/dt = 100A/µs ƒ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.7 ––– 62 40 Units °C/W 2 www.irf.com IRF634N/S/LPbF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 4.5V 1 4.5V 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 7.9A I D , Drain-to-Source Curr.


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