W3E32M64S-XBX

White Electronic Designs 32Mx64 DDR SDRAM FEATURES „ „ DDR SDRAM rate = 200, 250, 266, 333Mb/s Package: „ „ „ „ „ „ „ 219 Plastic Ball Grid Array (PBGA), 25mm x 25mm, 625mm2 W3E32M64S-XBX BENEFITS „ „ „ „ „ 41% SPACE SAVINGS vs. TSOP Reduced part count Reduced trace lengths for lower parasitic capacitance Suitable for hi-reliability applications Laminate interposer for optimum TCE match 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#) Commands entered on each positive CK edge Internal pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Programmable Burst length: 2,4 or 8 Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (one per byte) DQS edge-aligned with data for READs; centeraligned with data for WRITEs DLL to align DQ and DQS transitions with CLK Four internal banks for concurrent operation Data mask (DM) pins for masking write data (one per byte) Programmable IOL/IOH option Auto precharge option Auto Refresh and Self Refresh Modes Commercial, Industrial and Military TemperatureRanges Organized as 32M x 64 User configurable as 2x32Mx32 or 4x32Mx16 Pinout compatible with previous W3E16M64S-XBX version. Weight: W3E32M64S-XBX - 2.5 grams typical GENERAL DESCRIPTION The 256MByte (2Gb) DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM. ...