AO4836

AO4836 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4836 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. It is ESD protected. AO4836 is Pbfree (meets ROHS & Sony 259 specifications). AO4836L is a Green Product ordering option. AO4836 and AO4836L are electrically identical. Features VDS (V) = 30V ID = 7.2A RDS(ON) < 24m Ω (VGS = 10V) RDS(ON) < 40m Ω (VGS = 4.5V) ESD rating: 1500V (HBM) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 www.DataSheet4U.com G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C A Current ID TA=70°C Pulsed Drain Current B Maximum 30 ±20 7.2 6.1 30 2 1.44 -55 to 150 Units V V A IDM PD TJ, TSTG TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 55 92 37 Max 62.5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4836 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-B...