60V Dual N-Channel MOSFET
AO4828
60V Dual N-Channel MOSFET
General Description
The AO4828 uses advanced trench technology to provide excellent RD...
Description
AO4828
60V Dual N-Channel MOSFET
General Description
The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56mΩ (VGS = 10V) RDS(ON) < 77mΩ (VGS = 4.5V)
100% UIS tested 100% Rg tested
Top View
SOIC-8 Bottom View
Pin1
Top View
S2 G2 S1 G1
D2 D2 D1 D1 G1
D 1
G2 S1
D 2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C
Power Dissipation TA=70°C Avalanche Current B Repetitive avalanche energy 0.1mH B
PD
IAR, IAS EAR, EAS
Junction and Storage Temperature Range TJ, TSTG
Maximum 60 ±20 4.5 3.6 20 2 1.28 19 18
-55 to 150
Units V V
A
W A mJ °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 48 74 35
Max 62.5 110 60
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4828
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=60V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS ISM
Gate-Body leakage current Gate Threshold Voltage On state dra...
Similar Datasheet