AO4824

AO4824 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 specifications). AO4824L is a Green Product ordering option. AO4824 and AO4824L are electrically identical. Features Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 27mΩ Q2 VDS(V) = 30V ID=9.8A (VGS = 10V) <13mΩ (VGS = 10V) <15mΩ (VGS = 4.5V) D1 D2 SOIC-8 S2 G2 S1 G1 www.DataSheet4U.com 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 S1 G2 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C Pulsed Drain Current B IDM TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET Q1 t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient Maximum Junction-to-Lead C Max Q1 30 ±20 8.5 6.8 30 2 1.28 -55 to 150 Typ 48 74 35 Max Q2 30 ±12 9.8 7.8 40 2 1.28 -55 to 150 Max 62.5 110 40 Units V V A PD TJ, TSTG Symbol RθJA RθJL Symbol RθJA RθJL W °C Units °C/W Steady-State Parameter: Thermal Characteristics MOSFET Q2 t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Typ 48 74 35 Max 62.5 1...